| PART |
Description |
Maker |
| BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc.
GE[General Semiconductor]
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| MJ10005 |
NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
New Jersey Semi-Conduct...
|
| BDS10SMD BDS10SMD05 BDS12 BDS12SMD BDS11SMD05 BDS1 |
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND CERAMIC SURFACE MOUNT PACKAGES
|
Seme LAB
|
| MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005 MJ10004 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
Boca Semiconductor Corporation
Boca Semiconductor Corporat...
|
| MJ10015-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| 2SC1622A |
NPN Silicon Epitaxial Transistor
High DC current gain.Collector-base voltage VCBO 120 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| TIP140T |
NPN Epitaxial Silicon Darlington Transistor（Monolithic Construction With Built In Base-Emitter Shunt ResistorNPN硅外延达林顿晶体管（内置基极-射极分流电阻单片结构
|
Fairchild Semiconductor Corporation
|
| BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL58B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
| BUL55B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
